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Keywords:
fast high voltage transistor switches, hv, switch, relay, hv-switch,
hvswitch, vacuum relay, thyratron, krytron, spark-gap,
klystron, pulsed power, hv pulser, hv pulse, pockels cell, hv,
hochspannung, relais,
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hv-schalter, hochspannungsschalter, hochspannungsimpuls,
hochspannungspulser, commutateur haute tension, relais haute
tension, переключатель высокого напряжения,hv-ключь,hv-реле, 开关
高压, 继电器 高压 |
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HIGH-VOLTAGE SOLID-STATE SWITCHES:
We are
designing and manufacturing electronical
high-voltage
switching
modules in single switch, double switch, push-pull
switch,
fullbridge,
AC switch
and AC-push-pull switch
configuration, in MOSFET, IGBT, Thyristor, SCR and MCT technology.
For pulsed power and general high power and high voltage
applications.
With fixed and variable on-time.
Available in cost-efficient plastic housing or with cooling flange
or cooling fins in copper, ceramic or graphite. With
DLC direct
liquid cooling or ILC indirect liquid cooling. Individual housing,
attachment and connector solutions. Customized units for
individual voltage, current, power and frequency requirements.
HV
PULSER:
FQD fast pockels cell driver, high frequency pockels cell driver,
Q-switch driver, TOF delayed extraction, deflection grid driver,
TWR modulator, Klystron driver, piezo driver, kicker
magnet
driver, burst, square wave pulser, GHTS, FHPP. NOTE:
All BEHLKE
high-voltage solid-state switches can also be configured as a pulser unit to meet
individual OEM requirements. That means, additional part
components such as damping resistors, working resistors, snubbers,
buffer capacitors, diodes and diode networks, HV sockets and other
components can be integrated and vacuum potted in one housing. The
benefits of such integrated pulser solutions are less EMI, less
corona, less volume, increased electrical performance and
minimized assembly costs. Please consult factory for more details.
HV DIODES:
FDA fast high voltage diode assembly. HV diode networks with
serial blocking diode. Available with all the above
mentioned cooling options in any voltage and any current and any
power according to your individual specification.
HV SYSTEM COOLING:
All components
for DLC direct liquid cooling based on dielectric coolants such as
GALDEN®
HT-135. Pump units, heat exchanger, cooling plates, active and
passive radiators, flow sensors, quick connectors, tubing,
coolant.
ACCESSORIES: Passive part components, HV resistors,
HV capacitors, HV probes. |
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HTS 101-03: One
switch - eleven housing and cooling options... |
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These options are availble for all Behlke switches. Please consult
factory for custom specific solutions. |
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1) HTS 101-03 with shielded control input (LS-C) |
2) HTS 101-03 in flat case (FC) with pins (PIN-C) |
3) HTS 101-03 with ceramic cooling surface (CCS) |
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4) HTS 101-03 with nickel plated copper cooling fins (CF) |
5) HTS 101-03 with graphite cooling fins (CF-GRA) |
6) HTS 101-03 with ceramic cooling fins (CF-CER) |
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7) HTS 101-03 with potential-free Cu cooling flange (GCF) |
8) HTS 101-03 for indirect liquid cooling with water (ILC) |
9) HTS 101-03 for direct liquid cooling with Galden(DLC) |
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10) HTS 101-03 in pulser configuration (PC) |
11) HTS 101-03 with separated control unit (SEP-C) |
12) The HTS compact series for lower Pd(max) HTS 121-01-C) |
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1) HTS 101-03 with shielded
input (opt. LS-C). 1m linkage cable & 2nd socket is included. High quality self-latching
system (LEMO). Housing: Flame retardent and heat
resistant hard plastics.
2) HTS 101-03 in flat case (option FC)
with soldering pins for control connection (option PIN-C). Dimension 89x64x17
mm. Flame retardent and heat resistant housing mantle according to
UL94-V0.
3) HTS 101-03 with
ceramic cooling surface (option CCS). The top side of the switching module is made of ceramics
to reduce thermal resistance to ambient. Forced convection
recommended.
4)
HTS
101-03 with nickel plated copper cooling fins (option CF).
Available in various size, form and thickness (-X1, -X2, -XS, -LC,
-1). Switches with option CF can also be immersed in oil tanks.
5) HTS 101-03 with
graphite cooling fins (option CF-GRA). Compared to Cu, graphite has a similar cooling performance but only 20% of the weight of Cu.
Please note the reduced heat capacity.
6) HTS 101-03 with option CF-CER (ceramic cooling fins). Ceramic
cooling fins are potential free and can reduce the EMI in noise
critical applications. We suggest forced convection.
7)
HTS 101-03
with potential-free Cu cooling flange (opt.GCF) and high frequency
switching option (opt. HFS). The flange can be mounted on heat sinks.
For medium f(max) and medium Pd(max).
8) HTS 101-03 with
indirect liquid cooling (option ILC). For mains
water and other conductive coolants. The internal heat exchanger is
made of ceramics. For medium f(max) and medium Pd(max).
9)
HTS 101-03 with
direct liquid cooling (option DLC). For non-conductive fluids (e.g. GALDEN HT-135 or
low viscose oil). Best for high frequency applications with very
high power dissipation.
10) HTS 101-03
in pulser configuration (option PC) with HV pigtails (option
PT-HV), shielded input (LS-C )
and plastic flange housing (option FH).
HV sockets and additional part components can be
integrated to make a
customized OEM pulser. The option PC can also be combined with the
above cooling options. Please consult factory for more details.
11) HTS 101-03 with separated control control
unit (option SEP-C). To place the control
electronics up to 1m away from the power electronics. Plug
connection with self-latching mini plug.
12) If it must be really small: The new HTS compact series.
The picture shows the HTS 121-01-C (12 kV/15A) with option FC and
PIN-C (flat case + pins for the input). Dimension
79x38x17 mm.
Switches of the compact series can be made for voltages up
to 24kV in the DC and 12kV in the AC configuration.
Push-pull switches are available up to 12kV and push-pull AC
switches up to 6 kV.
Depending on voltage, the current rating will
be from 15 A to 260 A (as at March 2011). |
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EXTRACT FROM THE DELIVERY PROGRAM |
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A
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Fast thyristor switches for discharge purposes |
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12) NEW |
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1) HTS 120-100-SCR,
fast thyristor HV switch for a di/dt >2kA/µs. Shown in cost
efficient plastic housing with option FC (flat case). 12 kVDC, 1kA
pk, tr < 100...500 ns. Dimension 79x38x17 mm. 2) HTS
80-500-SCR, fast thyristor HV switch for a di/dt
>10kA/µs. Shown in cost efficient plastic housing with standard
high current
terminals. 8 kVDC, 5 kA pk, tr < 100...500 ns. 89x64x32
mm. 3) HTS 80-500-SCR, fast thyristor HV switch for a di/dt
>10kA/µs. With optional cooling flange, potential free (option
GCF). 8 kVDC, 5 kA pk, tr < 100...500 ns. Dimensions 132x100x40
mm. 4) HTS 120-500-SCR, fast thyristor HV switch for a di/dt
>10kA/µs. Shown in cost efficient plastic housing. Standard
high current
terminals. 12 kVDC, 5kA pk, tr < 100...500 ns. 122x64x31
mm. 5) HTS 120-500-SCR, fast thyristor HV switch for a di/dt
>10kA/µs. With optional copper cooling fins (option CF). Standard
high current
terminals. 12 kVDC, 5kA pk, tr < 100...500 ns. 122x64x66
mm. 6) HTS 240-1200-SCR, fast thyristor
HV switch for a di/dt >24kA/µs. With optional ceramic
cooling surface (option CCS). 24 kVDC, 12 kA pk, tr
< 100...500 ns 7/8) HTS 240-800-SCR, fast thyristor
HV switch for a di/dt >16kA/µs. With optional
Cu cooling fins (option CF-1). 24.000 VDC, 8 kA pk, tr
< 100...500 ns 9) HTS 240-300-SCR, fast thyristor
HV switch for a di/dt >6kA/µs. With optional Cu cooling fins, enlarged (option CF-X3)
and plastic flange housing (option FH). 24 kVDC, 3 kA pk, tr
< 100...500 ns 10) HTS 440-1200-SCR, fast
thyristor HV switch for a di/dt >24kA/µs. With optional Cu cooling fins
(option CF) and plastic flange housing (option FH). 44 kVDC, 12
kA pk, tr < 100...500 ns 11) HTS
500-1200-SCR, fast
thyristor HV switch for a di/dt >24kA/µs. With optional water cooling
(option ILC). 50 kVDC, 12
kA pk, tr < 100...500 ns 12) HTS 1500-1000-SCR,
fast thyristor HV switch for a di/dt >20kA/µs. With
optional liquid cooling for non-conductive coolants (option DLC).
150 kVDC, 10 kA pk, tr < 150...500 ns.
Note:
Unlike classical thyristor discharge switches with big disc
thyristors, Behlke thyristor switching modules are made of a very
large number of smaller thyristor dies, connected in parallel and in
series, where each thyristor has its own low impedance and
high-speed gate drive. A high power switching module can consist of up to
600 single thyristors with individual gate drives. This ensures a
very good dynamic current distribution over large areas without the
lifetime limiting hot spots known
from the classical thyristor switch designs. Behlke thyristor
switches can safely be operated at the highest possible di/dt and
dv/dt rates and at the highest possible peak currents without any
measurable descent of the life expectancy. Behlke thyristor switches
are truly gate controlled and do not draw firing energy from the HV
load circle. This allows a safe switching between 0V and the maximum
operating voltage without any restriction. The switches
are isolated for at least 150% of the maximum operating voltage, so
that high-side switching applications can be realized without big effort. The
isolation voltage required according to the medical standards of the
various countries (the demanded isolation voltage is often >250% of the operating voltage) can
safely be guaranteed by utilizing a sufficient isolation option
(e.g. option ISO-40, ISO-80 or ISO-120). An individual "medical
certification" according to the European safety standards is
available on request. In order to connect several Behlke thyristor
switches in parallel, they are equipped with a synchronization I/O.
This synchronization I/O ensures the synchron firing and inhibits
the trigger input of the other switches, if one switch is
off due to a fault condition, e.g. due to over-temperature. All
Behlke thyristor switches are optionally available with a grounded
cooling flange (option GCF), with nickel plated copper cooling fins
(option CF), with graphite cooling fins (option CF-GRA), with
ceramic cooling fins (option CF-CER), with water cooling (option
ILC), direct liquid cooling for non-conductive coolants (option DLC)
or with ceramic cooling surface (option CSS). |
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B1
- MOSFET switches with fixed on-time for general purposes |
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HTS
40-06, very fast MOSFET switch in standard plastic housing. Fixed on-time,
ton=100ns (50 ns - 100 µs optionally available)
4 kV, 60 A pk, rise time < 3 ns. 2)
HTS 150, MOSFET switch.
Fixed on-time, ton=150ns (100 ns - 100 µs optionally available).
With HV pigtails (PT-HV) and high isolation voltage
(ISO-40). 15 kV, 30 A, tr <10ns. 3) HTS
300, MOSFET switch. Fixed on-time, ton=200ns (100 ns - 100 µs
optionally available).Shown in standard plastic housing. 30 kV, 30
A, rise time < 10ns. |
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B2 - MOSFET, fixed
on-time, high di/dt and low impedance |
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1)
HTS
60-16, fast discharge switch with low stray
inductance. Fixed on-time, ton = 150ns. 6 kV, 160 A, tr <4ns @Ip(max). Pin sockets for PCB's
are included in
delivery. 2) HTS 80-16, fast
discharge switch with low stray inductance. Fixed on-time, ton =
150ns. 8 kV, 160 A,
tr <5ns @Ip(max). Pin sockets for PCB's are included in delivery. 3) HTS 80-26, fast discharge switch with low stray inductance. Fixed on-time,
ton = 180ns. 8 kV,
260 A,
tr <5ns @Ip(max). Pin sockets for PCB's are included in delivery. |
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B3- MOSFET, fixed on-time, high
di/dt and ultrafast |
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HTS
50-12-UF, ultrafast discharge switch with low inductance.
Fixed on-time, ton=200ns (10ns -1µs optionally). 5kV, 120A, tr
<2ns @Ip(max). Pin sockets for PCB's are included in delivery.
2) HTS 80-12-UF, ultrafast discharge switch with
low inductance. Fixed on-time, ton=200ns (10ns -1µs
optionally). 8kV, 120A, tr <3ns @Ip(max). Pin sockets for PCB's
are included in delivery. 3) HTS 80-20-UF, ultrafast
discharge switch with low inductance. Fixed
on-time, ton=200ns (20ns -1µs optionally). 8kV, 200A,
tr <4ns @Ip(max). Pin sockets for PCB's are included in delivery. |
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B4- TRENCH FET, fixed on-time, high current, low on-resistance |
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HTS
60-65-B, latest Trench FET technology for very low on-resistance and
high current. Fixed on-time, ton = 150ns. 6.5 kV, 650 A pk. Rise
time < 10 ns @Ip(max) 2) HTS 170-160-B,
latest Trench FET technology for very low on-resistance and high
current. Fixed on-time, ton = 200ns. 17 kV, 1600 A pk. Rise time <
15 ns @Ip(max). Separate control unit. 3)
HTS 330-160-B, latest Trench FET technology for very low
on-resistance and high current. Fixed on-time, ton = 250ns. 33 kV,
1600 A pk. Rise time < 18 ns @Ip(max). Separate control unit. |
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C1
- MOSFET switches, variable on-time, for general purposes |
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1)
HTS
181-01-C, MOSFET switch, compact series. Variable on-time from 50 ns
to infinite. 18 kV, 12 A, rise time < 15 ns.
Dimension 79 x 38 x 25 mm. Opt. PT-HV (HV pigtails) recommended. 2)
HTS
151-02, MOSFET switch, with option FC (flat case) with standard connectors.
Variable on-time from 50 ns to infinite. 15 kVDC, 25 A pk, rise time
< 8 ns.On-resistance < 30 Ohm. 3)
HTS 331-06, universal MOSFET switch with option CF (cooling fins), C-DR (driver cooling) and HFS (high
frequency switching). 33 kVDC, 60 A. On-resistance < 33 Ohm. |
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C2- MOSFET switches with variable on-time and high di/dt |
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HTS 61-40, MOSFET switch with high di/dt. Variable on-time from 300
ns to infinite. 6 kVDC, 400 A pk. Rise time < 10 ns @Ip(max) 2)
HTS
101-20, MOSFET switch with high di/dt. Variable on-time from 300 ns
to infinite. 10 kVDC, 200 A pk. Rise time < 12 ns @Ip(max)
3) HTS 311-130-B, MOSFET switch with high
di/dt in trench FET technology. Variable on-time 300 ns - ∞.
31 kVDC, 1300 A pk. Rise time < 20 ns @Ip(max). Separate control
unit. |
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C3- MOSFET, variable on-time, low coupling capacitance |
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HTS
901-10-LC2, low capacitance MOSFET switch in HV transient proof LC2
technology. The switch is designed to meet very harsh industrial
requirements. Isolation voltage > 150 kV (optionally up to 300 kV).
With removeable control unit (standard) or with separate control
unit as option. 90 kVDC, 100 A. On-resistance < 40 Ohm. Turn-on rise
time <50 ns. |
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C4
- Trench FET, variable on-time, high current, low resistance |
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HTS 71-13-B-C, Compact Series. Latest TRENCH FET technology for low on
resistance. 7.8 kVDC, 130 A pk, < 1 Ohm, tr < 10 ns. Dimension
79 x
38 x 17 mm 2) HTS 61-23-B,
Latest Trench FET for low on resistance and high peak current. With optional copper
cooling fins (option CF). 6.5 kVDC, 230 A pk,
Ron < 0.4 Ohm, tr < 15ns 3)
HTS 231-52-B, Latest Trench FET technology for low on resistance and
high peak current. 23 kV, 520 A, < 0.7 Ohm, tr < 20 ns. With
option CF-X2 (cooling fins X2) and C-DR (driver cooling) |
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C5- MOSFET, variable on-time, bipolar, for AC and DC voltage |
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HTS 61-01-AC-C, MOSFET switch for AC, DC and bipolar DC voltage. Compact series.
Dimension 79 x 38 x 17 mm. 6 kVAC (pk) / 15 A (pk).
2) HTS 131-26-AC-B, Trench FET switch for
AC, DC and bipolar DC voltage. With optional copper cooling fins
(option CF) and shielded input (option LS-C) . 13 kVAC (pk) / 260 A (pk).
3) HTS 231-26-AC-B, Trench FET switch for
AC, DC and bipolar DC voltage.With optional copper cooling fins
(option CF) and shielded input (option LS-C) . 23 kVAC (pk) / 260 A (pk).
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C6- IGBT switches with variable on-time, high current |
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1) HTS
61-160-FI, fast IGBT switch. Variable on-time 200ns to infinite.
With pigtails for control connection (option PT-C). 6 kV, 1600 A.
Turn-on rise time <90 ns @Ip(max). Turn-off rise time <0.8 µs.
2) HTS 101-120-SI, standard IGBT switch.
Variable on-time 1µs to infinite. 10 kV, 1200 A pk. Turn-on rise time
< 150 ns @ Ip(max). Turn-off rise time < 5 µs. 3) HTS
241-240-SI, standard IGBT switch. Variable on-time 200 ns to
infinite. With optional cooling fin (option CF) and flange housing
(option FH). 24 kV, 2400 A pk. Rise time < 150 ns @ Ip(max). |
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C7- MCT switches with variable on-time, high current |
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HTS
61-300-MCT, Thyristor switch with variable on-time. 6 kVDC, turn-on
current 3 kA, turn-off current 100 A. Turn-on rise time 200 ns,
turn-off rise time 1.5 µs. 2) HTS
101-300-MCT, Thyristor switch with variable on-time. 10 kVDC,
turn-on current 3 kA, turn-off current 100 A. Turn-on rise time 200
ns, turn-off rise time 1.5 µs. 3) HTS
181-300-MCT, Thyristor switch with variable on-time. 18 kVDC,
turn-on current 3 kA, turn-off current 100 A. Turn-on rise time 200
ns, turn-off rise time 1.5 µs. |
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C8
- MOSFET switches in push-pull
configuration (half bridge) |
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1)
HTS 61-01-HB-C, MOSFET push-pull switch. Compact series.
Dimension 79 x 38 x 17 mm. Variable HV pulse width from 50 ns
to infinite. 2 x 6 kV, 15 A. Rise and
fall time < 8ns. 2)
HTS 81-06-GSM, MOSFET
push-pull switch in cost-efficient plastic
housing. HV onnectors on bottom. Variable
HV pulse width from 150 ns to infinite. 2 x 8 kV, 60 A. Rise &
fall time < 7ns. 3) HTS 201-03-GSM, MOSFET
push-pull switch with
optional cooling fins
(CF) and flame retardent housing according to UL94-V0 (option UL94).
2 x 20 kV, 30 A pk,
rise and fall time < 10 ns
4)
HTS 301-03-GSM, MOSFET push-pull switch with the options FH (flange
housing), DLC (direct liquid cooling), C-DR (driver cooling) and HFS
(high frequency switching). 2 x 30 kV, 30 A Rise and fall time < 20
ns, repetition rate >100 kHz. Maximum power dissipation up to 6 kW
with DLC cooling.
Dimension 330x120x75 mm. 5) HTS 1501-10-GSM,
MOSFET push-pull switch with the options FH (flange
housing) and DLC (direct liquid cooling). 2 x 150 kV, 100 A.
Rise and fall time < 90 ns.
Note: Push-pull switches are available up to 150
kV / 200 A. The maximum power dissipation Pdmax can be increased up to 50 kW. |
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D- Examples of standard HV pulsers & pockels cell drivers
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Picture coming soon
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1) GHTS 60 /100,
laboratory square wave pulser for capacitive load. With CE
certification. Up to 10 kV. Rise & fall time 10 ns, f(max) = 30
kHz. Manual polarity reversal. HV pulse monitor out. 2)
FBP
201-01, Fast high voltage bipolar and AC pulser. Pulser
accepts positive and negative supply voltages without polarity
reversal. Ideal for TOF applications. 20 kVAC / 15 A, other
voltages and currents on request. Optional
liquid cooling (ILC or DLC) for high frequency operation. With CE
certification. HV pulse monitor output.
3)
FSWP 61-02, MOSFET push-pull pulser with
DLC liquid cooling for high frequency
operation.With pulse monitor output. 6 kVDC, 20A, tr/tf
<8ns, fmax=3MHz
4)
HTS XXX-XXX with option PC. Every BEHLKE HTS
switch can be configured as a pulser according to the customers
requirements. Please consult BEHLKE for more details.
5) FQD 50-02-C, MOSFET pockels cell driver,
compact series. LxWxB = 64x30x18 mm (2.5x1.18x 0.7inch). On-mode configuration, 5 kV, 20 A pk,
rise time
< 5 ns
6) FQD 40-06, MOSFET pockels cell driver,
with optional cooling flange (GCF) for
repetition rates up to 150 kHz. On-mode, 4 kV, 60 A pk,
rise time < 5ns
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E- Fast recovery high voltage diodes, series FDA |
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1) FDA 160-150. Fast recovery diode 16 kV /
1500 A. Reverse recovery <85 ns @150A.
Standard housing. The picture shows top and bottom side.
2) FDA 160-150. Fast recovery diode 16 kV /
1500 A. Reverse recovery < 85 ns @ 150A. Top:
With cooling fins (CF). Bottom: With Cu
cooling flange (GCF).
3) FDA 160-300. Fast
recovery diode 16 kV / 3000 A. Reverse recovery <85 ns @ 300A.
Housing with
optional copper cooling fins (option
CF).
4) FDA 350-150. Fast recovery diode 35 kV /
1500 A. Reverse recovery <85 ns @150A.
Standard housing
with customized high voltage connectors.
5) FDA 320-150. Fast recovery diode 32 kV /
1500 A. Reverse recovery <85 ns @150A. With
optional cooling fins (CF) for max. 400W power
dissipation.
6) FDA 160-800. Fast recovery diode
16 kV / 8000 A.
Reverse recovery <85 ns @ 800A.
Flange housing (FH) with cooling fins (CF) and pigtails
(PT-HV).
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Examples
of customized HV switches & HV pulsers
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1) Customized HV pulser unit with remote controlled polarity change.
Industrial TOF application. +/- 10 kV, 30 A (pk), rise and fall
time <10 ns
2) Customized
thyristor switch with water cooling.
Medical application with 55 kVDC isolation
requirement. 24 kVDC, 12 kA pk, current rise time < 500 ns.
3) Customized thyristor switch for seismological explorations in earth drill holes. 130 x 20 x 20mm. 6 kVDC, 1kA pk, current rise time < 500 ns.
4/5) Customized AC switch for high frequency high power
applications. Designed for direct liquid cooling (DLC). Fig. 4: The
plastic housing (PEEK), pressure and radiation prooff,according to the customer requirements..Fig. 5: The AC switch, made of 35x4 FET,
800V/60A each = 28 kVAC / 120A, Ron < 2.5 Ohm, rise time
<15 ns.Fig. 5: The AC switch, made of 35x4 FET,
800V/60A each = 28 kVAC / 120A, Ron < 2.5 Ohm, rise time
<15 ns.
6) Customized MOSFET push-pull switch with mains water cooling in a very compact
design. 5 kVDC, 25 A pk, fmax 300 kHz, rise and fall time
< 8ns
7) Customized pockels cell driver. 2
push-pull switches in full bridge configuration to generate
a HV pulse width from 7ns to infinite. 8kV, 30 A pk, > 500 kHz
8) Customized pockels cell driver for
industrial lasers. Cu cooling flange with mains water cooling.
UL94-V0 Push-pull switch, 5 kV, rise and fall time < 10ns,
fmax=300kHz.
9) Customized
thyristor switch in a special
housing for the direct replacement of a spark-gap in
an existing system. With water cooling. 24 kV, 8 kA
(pk). |

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